Analysis of Single Wall Carbon Nanotube Interconnects &Comparison with Copper Interconnects at Different Technology Nodes

This paper investigates the performance of the bundle of Single wall Carbon Nanotubes (SWCNT) for low-power and high-speed interconnects for future VLSI applications. The power dissipation and delay of SWCNT bundle interconnects are examined and compared with that of the Cu interconnects at the different technology (16nm, 22nm, 32nm & 45nm) nodes for both intermediate and global interconnects. The results show that SWCNTs bundle consume less power and also faster than Cu for intermediate and global interconnects. It is concluded that the Metallic SWCNT has been regarded as a viable candidate for intermediate and global interconnects in future technologies.